Compact Low-dropout Linear Regulator Design in 0.13 µm CMOS Technology for IoT Based Remote Infectious Disease Monitoring System
Keywords:complementary metal oxide semiconductor (CMOS), low-dropout regulator (LDO), low power
With the widespread adoption of the internet of things (IoT), power management of the different electronic (i.e. IoT) devices has become a major challenge. The low-dropout linear regulator (LDO) circuit is widely used for power management applications of electronic devices. This article reports the design and simulation of a low-dropout linear regulator (LDO) circuit, powered by a 1.2 V DC power supply voltage. In order to optimise the power dissipation, low layout silicon area and lower dropout voltage, a current mirror based transistor optimised LDO circuit has been implemented. The simulation results show that the proposed LDO regulator circuit exhibits a 582 mV low-dropout voltage, 1.568 mW power dissipation, and a very compact layout silicon area of 163.84 µm 2(12.795 × 12.805 µm). The proposed LDO linear regulator archi- tecture is designed and validated in 0.13 µm TSMC CMOS process technology using Mentor Graphic EDA tools.
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Copyright (c) 2022 Proceedings of the Bulgarian Academy of Sciences
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